Navitas Closes Acquisition of Claros, Advancing AI Infrastructure with Grid-to-xPU Power DeliveryCompletes Navitas’ high-power portfolio with Claros’ IVR technology, enabling vertical and embedded architectures and providing last step in power delivery to the core
Navitas and Microchip Collaborate to Deliver 800V Reference Design for Next-Generation AI Data CentersSolution combines digital power control, GaN technology, and hardware-based security to accelerate development of high-efficiency rack power systems based on the 800V DC OCP standard
U.S. Government Selects Navitas to Develop Next-Generation 10 kV SiC Power SemiconductorsAward recognizes Navitas' leadership in ultra-high-voltage (UHV) SiC technology and resilient U.S.-anchored manufacturing supply chain
Navitas To Acquire Claros, Advancing AI Infrastructure with VPD & IVR Technology for Grid-to-xPUThe proposed acquisition is expected to provide the last step in power delivery to the core to complete Navitas’ grid-to-xPU high-power portfolio, accelerating its AI infrastructure strategy under Navitas 2.0 transformation
Navitas Files Patent Infringement Lawsuit Against Renesas ElectronicsRenesas’ Major GaN Product Lines Infringe Four Navitas Patents, Suit Alleges
Navitas and Magnachip Announce Strategic Partnership to Accelerate High-Voltage and Ultra-High-Voltage Silicon Carbide AdoptionLicense agreement provides Magnachip access to Navitas’ GeneSiC™ Gen 4 and Gen 5 SiC technologies spanning 1200 V, 2300 V, 3300 V and higher voltages, supported by Navitas’ supply chain and materials ecosystem
Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal ManagementTORRANCE, Calif., June 08, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of its new UHV-TO-247-4-ISO package, setting a new benchmark for high-performance discrete power devices.
Navitas Collaborates with NVIDIA MGX™ Ecosystem to Accelerate 800 VDC AI InfrastructureTORRANCE, Calif., June 03, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, was honored to participate in NVIDIA's Partner Ceremony held on May 29th, 2026, at the Taipei Nangang Exhibition Center. The event brought together key ecosystem partners supporting the NVIDIA AI Factory MGX™ platform, highlighting industry collaboration to accelerate the development of next-generation AI data centers powered by emerging 800 VDC rack architectures.
Navitas to Showcase Breakthrough GaN and SiC Based Solutions for AI Data Center, Energy and Grid Infrastructure, and Industrial Electrification at PCIM 2026Highlights include two SST solutions for converting the MV grid to 800V HV DC, a 10 kW, 800 V-to-50 V DC-DC full-brick platform, along with a 20 kW 800 V-to-6 V power delivery board for AI data center
Navitas Debuts Revolutionary 800 V–6 V Power Delivery Board at NVIDIA GTC 2026The breakthrough, 800 V–6 VDC-DC power delivery board eliminates traditional 48V intermediate bus converter stage while improving system efficiency, reliability, cost, and compute density. The platform is being showcased at NVIDIA GTC 2026.
Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ TechnologyQDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and lifetime for AI data centers, grid and energy infrastructure, and industrial electrification with voltage ratings of 1200 V
Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC ImplementationFirst systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers.
